Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO. Please reconnect. Please check your email for instructions on resetting your password. These metrics are regularly updated to reflect usage leading up to the last few days. To further confirm the antiferromagnetism of the nonstoichiometric nickel oxide thin films, the exchange bias (EB) effect was investigated in‐plane. Conductivity of specimen C.I as a function of reciprocal temperature. Your Mendeley pairing has expired.
The conductivity of the oxide has been found to be proportional to the concentration of the Ni 3+ ions in the lattice. These samples are obtained from a nickel salt, using various decomposition temperatures.
acknowledge funding from the EPSRC grant EP/P027032/1. Number of times cited according to CrossRef: In-situ exsolved FeRu alloy nanoparticles on Ruddlesden-Popper oxides for direct hydrocarbon fuel solid oxide fuel cells. Here, 4 seconds pulses were enough for saturated growth, while in reports of PEALD nickel oxide with remote plasma, pulses of 15 to 30 seconds are required to achieve saturation and uniform growth under moderate vacuum conditions.22, 23. The authors declare that there is no conflict of interest regarding the publication of this article.
Additionally, we compare the PEALD nickel oxide to the films deposited with other chemical deposition techniques, that is, atmospheric pressure chemical vapor deposition and solution processing for better understanding of the significance of the deposition method on the microstucture, stoichiometry, and consequently, the electrical and magnetic properties (see Supporting Information). Yibin Jiang, Le Jiang, Fion Sze Yan Yeung, Ping Xu, Shuming Chen, Hoi-Sing Kwok, Guijun Li. Keu Hong Kim, Jong Ho Jun, Jae Shi Choi. The temperature‐dependent magnetization curve shows no bi‐furcation between the zero‐field cooled (ZFC) and 100 Oe field cooled (FC) curve.
the Altmetric Attention Score and how the score is calculated. Electrical conductivity of the system X ZrO2 + (1−X) Er2O3; 0.05 ⩽ X ⩽ 0.15.
Chemical routes, including chemical vapor deposition techniques and solution processing, can provide a straightforward way to coat large areas uniformly at low temperatures, but the growth is governed by the chemistry, with little control over the film composition and properties. The initial hysteresis loop (ZFC loop) which starts from (0,0) confirms a complete demagnetization of the film by the applied protocol (see Supporting Information) and that no stray field is present in the superconducting coil of the magnetometer. Working off-campus?
Enter your email address below and we will send you your username, If the address matches an existing account you will receive an email with instructions to retrieve your username, A, XRD pattern of the PEALD grown 170 nm nickel oxide film showing dominant (200) orientation. The antiferromagnetic nature of the NiO has made it a common material in spintronics research,13 for example, in the fabrication of spin valves14 and next‐generation memory technologies.15 In all of these applications, a well‐controlled growth process of the materials is required.
The low impurity content also confirmed the suitability of the PEALD method with Ni(acac)2 precursor for the growth of nickel oxide films, as PEALD processes for β‐diketonate precursors for growth of nickel oxide films have not been reported before,22-24 and the thermal ALD processes can suffer from high concentrations of carbon impurities.25 XPS results, shown in Figure 2 are in accordance with the ToF‐ERDA, showing a nonstoichiometric composition (see Table S1).
Junkai Deng, Majid Mortazavi, N. V. Medhekar, Jefferson Zhe Liu.
Mr. Chris Amey is acknowledged for the XPS measurements, and Mr. Jerome Innocent for measuring UVVis of the PEALD and AP‐CVD samples. Yan Zhao, Linfeng Hu, Shangpeng Gao, Meiyong Liao, Liwen Sang, Limin Wu. O Bowl-Shaped Array Film and Its Enhanced Photocurrent by Mg, Nickel oxide (NiO) is one of the most studied transition metal oxides due to its versatile chemical and electronic properties, enabling it to be used in a wide variety of applications.
Electrical conductivity of the system Y2O3CeO2. Keu Hong Kim, Eung Ju Oh, Jae Shi Choi.
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Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
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The impurity contents are also significantly lower than in films deposited with other chemical methods (see Table S1).
Jong Sik Park, Zin Park, Don Kim, Dong Hoon Lee, Seong Han Kim, Chul Hyun Yo, Keu Hong Kim. This article is cited by 1 publications. For ZFC, no HE was present.
All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer.
M. Qammar, Z. Malik, F. Malik, T. Baig, Abdul J. Chaudhary.
Schoenfeld. Keu Hong Kim, Hui Jun Won, Jae Shi Choi.
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523 (Tff)- This distortion is extremely small in NiO the cube angle being 903-8' at 9, corres- ponding to a contraction along one of the <111> axes of 4x 10~3 A. This distortion is explained as a small Jahn-Teller effect arising from the spin degeneracy of the Ni2+ ground state. Besides the dielectric properties, the electrical modulus study O alloys for photocathodes of high efficiency dye-sensitized solar cells.
Two film thicknesses, 50 and 170 nm, were grown for different measurements. R.L.Z.H. B, Exchange bias (H, I have read and accept the Wiley Online Library Terms and Conditions of Use, Electrical properties of non‐stoichiometric nickel oxide, Thermodynamic and transport properties of stoichiometric and nonstoichiometric nickel oxide, Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance, Effects of processing conditions on the work function and energy‐level alignment of NiO thin films, Functionalized nickel oxide hole contact layers: work function versus conductivity, In situ atmospheric deposition of ultrasmooth nickel oxide for efficient perovskite solar cells, Reducing architecture limitations for efficient blue perovskite light‐emitting diodes, Highly sensitive and selective gas sensors using p‐type oxide semiconductors: overview, Three dimensional‐ stacked complementary thin‐film transistors using n‐type Al:ZnO and p‐type NiO thin‐film transistors, Filament conduction and reset mechanism in NiO‐based resistive‐switching memory (RRAM) devices, Room‐temperature fabricated flexible NiO/IGZO pn diode under mechanical strain, Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices, Perspectives of antiferromagnetic spintronics, Nature of coupling and origin of coercivity in giant magnetoresistance NiO‐co‐cu‐based spin valves, Spin transport and spin torque in antiferromagnetic devices, Electronic and transport properties of Li‐doped NiO epitaxial thin films, Properties of nickel oxide thin films deposited by RF reactive magnetron sputtering, Stoichiometry of nickel oxide films prepared by ALD, Studies of NiO thin film formation by atomic layer epitaxy, Atomic layer deposition of oriented nickel titanate (NiTiO3), Alumina–supported nickel oxide for ozone decomposition and catalytic ozonation of CO and VOCs, Electron‐blocking and oxygen evolution catalyst layers by plasma‐enhanced atomic layer deposition of nickel oxide, Atomic layer deposition of NiO to produce active material for thin‐film lithium‐ion batteries, Atomic layer deposition of transparent p‐type semiconducting nickel oxide using Ni(tBu, Atomic layer deposition of NiO by the Ni(thd), X‐ray photoelectron spectroscopic chemical state quantification of mixed nickel metal, oxide and hydroxide systems, Morphology controlled synthesis of NiO films: the role of the precursor and the effect of the substrate nature on the films’ structural/optical properties, Effect of growth temperature on structure and optical characters of NiO films fabricated by PA‐MOCVD, Plasma‐assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells, Energy levels, electronic properties, and rectification in ultrathin p‐NiO films synthesized by atomic layer deposition, Preparation and characterization of spray pyrolyzed nickel oxide (NiO) thin films, Surface and gas sensing properties of nanocrystalline nickel oxide thin films, Asymmetric shift of exchange bias loop in Ni‐Ni(OH), Magnetic couplings and exchange bias in Fe/NiO epitaxial layers, Behaviour of hydrogen in wide band gap oxides. All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer. Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. We have shown that a β‐diketonate type precursor can be used in an efficient PEALD process to grow nickel oxide thin films. Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method. Mari Napari, Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK.
No remanence magnetization (MR) was observed within the measured temperature range (350‐2 K), as seen in the inset of Figure 3. Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK, Department of Physics, University of Jyväskylä, Jyväskylä, Finland. The resistivity of 170 nm films was ca. Keu Hong Kim, Do Young Yim, Sung Ho Park, Jae Shi Choi. Nickel oxide is rarely stoichiometric (i.e., Ni 1.00 O 1.00) and there are a small number of Ni 3+ ions in the crystal lattice as well as Ni 2+ ions. X‐ray diffraction measurements indicated that the films were polycrystalline cubic NiO with clear (200) preferred orientation (Figure 1) and crystallite size of ca.
Electrical conductivity of pure and doped α-ferric oxides.
This anomaly is sometimes accompanied by thermal hysteresis effects which appear to be strain dependent. We use cookies to help provide and enhance our service and tailor content and ads. Since Py is ferromagnetic, an EB shift (HE) should be observed if the nickel oxide film is antiferromagnetic.
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